cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 1/6 BU941ZNF3 cystek product specification npn epitaxial planar transistor BU941ZNF3 features ? high bv ceo ? low v ce(sat) ? high current capability ? built-in clamping zener ? pb-free lead plating package applications ? high ruggedness electronic ignitions equivalent circuit outline to-263 BU941ZNF3 b base c collector e emitter b c e b c e ordering information device package shipping BU941ZNF3-0-t7-x to-263 800pcs / tape & reel (pb-free lead plating package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t7: 800 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 2/6 BU941ZNF3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 350 v collector-emitter voltage v ceo 350 v emitter-base voltage v ebo 5 v i c(dc) 15 collector current i c(pulse) 30 *1 a i b(dc) 1 base current i b(pulse) 5 *1 a pd (t a =25 ) 2 power dissipation pd (t c =25 ) 150 w thermal resistance, junction to ambient r ja 75 c/w thermal resistance, junction to case r jc 1 c/w junction temperature tj 175 c storage temperature tstg -65~+175 c note : *1. single pulse pw=10ms characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 350 - 450 v i c =1ma, i e =0 bv ceo 350 - 450 v i c =100ma, i b =0 i ceo - - 100 a v ce =350v, i e =0 i cbo - - 100 a v cb =350v, i e =0 i ebo - - 10 ma v eb =5v, i c =0 *v ce(sat) 1 - - 1.6 v i c =6a, i b =10ma *v ce(sat) 2 - - 1.5 v i c =8a, i b =100ma *v ce(sat) 3 - - 1.6 v i c =10a, i b =250ma *v be(sat) 1 - - 2.2 v i c =8a, i b =100ma *v be(sat) 2 - - 2.5 v i c =10a, i b =250ma *v fec - - 1.6 v i c =10a *h fe 1 1000 - 3200 - v ce =10v, i c =5a *h fe 2 600 - - - v ce =10v, i c =10a *h fe 3 400 - - - v ce =10v, i c =13a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 3/6 BU941ZNF3 cystek product specification typical characteristics current gain vs collector current 100 1000 10000 100 1000 10000 100000 collector current---ic(ma) current gain---hfe vce=10v saturation voltage vs collector current 100 1000 10000 100 1000 10000 100000 collector current---ic(ma) saturation voltage---(mv) ic=40ib vcesat ic=80ib ic=100ib saturation voltage vs collector current 100 1000 10000 100 1000 10000 100000 collector current---ic(ma) saturation voltage---(mv) vbesat @ ic=40ib built-in diode forward characteristics 100 1000 10000 1 10 100 1000 10000 100000 forward current---if(ma) forward voltage---vf(mv) power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 20 40 60 80 100 120 140 160 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 4/6 BU941ZNF3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 5/6 BU941ZNF3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c660f3 issued date : 2010.10.01 revised date : 2015.09.04 page no. : 6/6 to-263 dimension *:typical inches millimeters inches millimeters marking : BU941ZNF3 cystek product specification dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 - - 6 8 f 0.0450 0.0550 1.14 1.40 2 - - 6 8 g 0.0900 0.1100 2.29 2.79 3 - - 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . a b c d 123 k l j g h e f device name year code: 52015, 6 2016,?, etc month code: 1jan, 2 feb,?,9 sep, a oct, b nov, c dec 2 1 2 3 i style : pin 1.base 2.collector 3.emitter 3-lead plastic surface mounted package cystek package code : f3
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